PART |
Description |
Maker |
M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
IDT728980 IDT728980J IDT728980J8 |
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 5.0V TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
|
IDT[Integrated Device Technology]
|
IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
S70FL256P |
256-Mbit 3.0V Flash
|
Cypress Semiconductor
|
CY62147EV30LL-45BVXA |
4-Mbit (256 K x 16) Static RAM
|
Cypress Semiconductor
|
V58C2256804SC |
256 Mbit DDR SDRAM
|
ProMOS Technologies
|
HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies AG
|
CY7C1041CV33-8ZSXC |
4-Mbit (256 K × 16) Static RAM
|
Cypress Semiconductor
|